Silicon nitride (Si3N4) bonded silicon carbide (SiC) material is produced by adding industrial silicon paste into artificial aggregate. Under high temperature, Si and N2 reacts with the formula of 2N2+3Si=Si3N4, Si3N4 bonded Sic material is formed by bonding SiC particles tightly. Therefore, Si3N4 bonded SiC material is an excellent refractory with the original properties of SiC. The material has quite high strength even under the temperature of 1700.C has properties of creep deformation resistance and anti-chemical erosion, and has excellent thermal conductivity and wear-resistance. Comparing with other several bonded SiC materials, Si3N4 bonded SiC material has attracted more and more attention.
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